The LLNL-led initiative will evaluate the Big Aperture Thulium (BAT) laser technology to enhance EUV source efficiency by ...

As US restrictions continue getting tougher, Chinese researchers are coming up with innovative approaches to chip ...

Extreme Ultraviolet (EUV) lithography is a critical technology for manufacturing semiconductor chips smaller than 7 nanometers. For years, Dutch company ASML has maintained a global monopoly on EUV ...

EUV, extreme ultraviolet lithography, is nearly completely associated with the Dutch company ASML, the only maker of EUV ...

However, the move from 193 nm excimer laser technology to 13.5 nm EUV technology has been far from straightforward, for a number of reasons. First, because EUV light is absorbed by air (in ...

1月6日消息，美国劳伦斯利弗莫尔国家实验室（LLNL）宣布开发出了一种名称为大孔径铥 （BAT） 激光器，旨在为极紫外 （EUV） 光刻技术的下一步发展奠定基础。该激光器的效率号称是目前ASML EUV光刻机中使用的二氧化碳（CO2）激光器的 10 ...

The XUUS uses high-harmonic generation (HHG) of near-infrared light from a Ti:Sapphire laser to generate EUV wavelengths. The HHG process is analogous to conventional second- or third-harmonic ...

在半导体制造领域，极紫外光刻（EUV）技术一直是推动芯片制造先进工艺发展的关键。然而，当前的EUV光刻系统面临着能耗高、成本昂贵等问题。近日，美国劳伦斯利弗莫尔国家实验室（LLNL）宣布正在研发一种基于铥元素的拍瓦级（petawatt-class）铥 ...

据报道，美国劳伦斯利弗莫尔国家实验室正在研发一种拍瓦级（petawatt-class）铥激光器（thulium laser），据说其效率比 EUV 工具中使用的二氧化碳激光器高 10 倍，并且可以在未来许多年内取代光刻系统中的二氧化碳激光器。

据劳伦斯利弗莫尔国家实验室的研究团队介绍，相比现有EUV光刻系统所采用的CO2激光器，BAT 激光器可以将 EUV能源效率提高约 10 倍。这可能会助力未来“beyond EUV”光刻系统能够生产更小、更强大、制造速度更快、耗电量更少的芯片。

The LLNL-led initiative will evaluate the Big Aperture Thulium (BAT) laser technology to enhance EUV source efficiency by approximately tenfold compared to the current industry-standard CO2 lasers.