Scientists have imaged and fine-tuned a new type of magnetic material far beyond the souveniers you'll find stuck on your ...

The use of a ferroelectric tunnel junction to control the spin polarization of adjacent magnetic electrodes promises ... low-power-consumption spintronic devices. There has been a considerable ...

A new study introduces a low-energy MRAM device using electric fields for data writing, contrasting with the high-energy ...

making them suitable for the development of next-generation magnetic storage devices. Despite their potential, however, the magnetic phase diagram of these materials remains largely unexplored.

Magnetoresistive Random Access Memory (MRAM) is part of the next generation of storage devices expected to meet these needs. Researchers at the Advanced Institute for Materials Research (WPI-AIMR) ...