美国劳伦斯利弗莫尔国家实验室（LLNL）宣布开发出了一种名称为大孔径铥 （BAT） 激光器，旨在为极紫外 （EUV） 光刻技术的下一步发展奠定基础。

近日据芯智讯报道，俄罗斯自研出EUV光刻机。这一重大突破或将打破ASML在该领域的技术垄断，为全球半导体产业带来新的变革。 EUV光刻机是制造 ...

Extreme-ultraviolet (EUV) lithography at 13.5 nm is expected to be introduced in high-volume semiconductor chip production over the next three years. Research is now underway to investigate sub-10 ...

Lam Research Corporation (Nasdaq: LRCX) today announced that its innovative dry photoresist (dry resist) technology has been ...

At imec, the 28nm pitch dry resist processes developed by Lam are compatible with both low and high numerical aperture (NA) EUV scanners. These processes not only enhance EUV sensitivity and ...

The company's dry resist technology is a critical advancement for chipmakers as they transition to smaller transistor features and pitch sizes. It addresses the challenge of maintaining high ...

EUV tools with a 11.2nm wavelength The Russian ... designed and optimized for the new wavelength. The laser source, resist chemistry, contamination control, and other supporting technologies ...

“Good progress has been made towards achieving resist resolution and sensitivity ... need to address the cost and risk of developing EUV technologies, and to the recognition that 22 nm solutions ...