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腾讯网
1 个月
消息称内存原厂考虑 HBM4 采用无助焊剂键合,进一步降低层间间隙
IT之家 11 月 14 日消息,据韩媒 ETNews 报道,三星电子、SK 海力士、美光均对在下代 HBM4 内存中采用无助焊剂键合(Fluxless Bonding)技术抱有兴趣 ...
来自MSN
1 个月
内存厂商积极探索新技术:无助焊剂键合有望助力HBM4降低层间间隙
据韩国媒体ETNews近期披露,业界领先的内存制造商如三星电子、SK海力士以及美光,正着眼于采纳无助焊剂键合技术,以将其应用于下一代高性能 ...
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